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K7N163631B06 - 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM

K7N163631B06_3692326.PDF Datasheet


Part No.	K7N163631B06 K7N161831B
Description	512Kx36 & 1Mx18 Pipelined NtRAM
File Size	561.61K / 25 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM

Related Part Number

PART	Description	Maker
K7Q163682A K7Q161882 K7Q161882A	512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36 512Kx36 & 1Mx18 QDR b2 SRAM	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
K7N161831B-QFCI25 K7N163631B-QFCI25	512Kx36 & 1Mx18 Pipelined NtRAM	Samsung semiconductor
K7P163666A-HC25 K7P163666A-HC33 K7P161866A-HC25 K7	1M X 18 STANDARD SRAM, 1.6 ns, PBGA119 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM 512Kx361Mx18同步流水线的SRAM 512K X 36 STANDARD SRAM, 1.5 ns, PBGA119	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7A161830B K7A163630B	512Kx36 & 1Mx18 Synchronous SRAM	SAMSUNG ELECTRONICS
K7S1618T4C	512Kx36 & 1Mx18 QDR II b4 SRAM	Samsung semiconductor
K7M161825M K7M163625M	512Kx36 & 1Mx18 Flow-Through NtRAM-TM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7R163684B06 K7R161884B	512Kx36 & 1Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7I163682B06 K7I161882B	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7I163684B K7I161884B	512Kx36 & 1Mx18 DDRII CIO b4 SRAM	Samsung semiconductor
K7Q161862B	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
K7Q161852A	(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor

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